Semianalytical model for simulation of electronic properties of narrow-gap strained semiconductor quantum nanostructures
نویسندگان
چکیده
A complete semi-analytical model is proposed for the simulation of the electronic, mechanical and piezoelectric properties of narrow gap strained semiconductor quantum nanostructures. A transverse isotropic approximation for the strain and a new axial approximation for the strained 8x8 Hamiltonian are proposed. It is applied extensively to the case of InAs/InP quantum dots (QD). Symmetry analysis shows that the non-vanishing splitting of the electron P states is smaller in InAs/GaAs QD than in InAs/InP QD. Analytic expressions for the first and second order piezoelectric polarizations are proposed. P.A.C.S. 71.20.Nr, 73.21.La, 78.20.Hp
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